Passivation effects in Ni∕AlGaN∕GaN Schottky diodes by annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2234569
Reference16 articles.
1. Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation
2. Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric
3. Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation
4. Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation
5. Postprocessing annealing effects on direct current and microwave performance of AlGaN∕GaN high electron mobility transistors
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