Postprocessing annealing effects on direct current and microwave performance of AlGaN∕GaN high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1797556
Reference5 articles.
1. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
2. High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE
3. Recessed 0.25 [micro sign]m gate AlGaN/GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE
4. Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures
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3. Performance enhancement of gate-annealed AlGaN/GaN HEMTs;Journal of the Korean Physical Society;2017-03
4. Temperature-Dependent Instabilities of DC characteristics in AlGaN/GaN-on-Si Heterojunction Field Effect Transistors;JSTS:Journal of Semiconductor Technology and Science;2014-10-30
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