Experimental and theoretical study on device-processing-incorporated fluorine in AlGaN/GaN heterostructures-Reference-Cited by-同舟云学术

Experimental and theoretical study on device-processing-incorporated fluorine in AlGaN/GaN heterostructures

Published:2020-06-01 Issue:6 Volume:10 Page:065122
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Xu Jianxing¹²^ORCID,Tong Xiaodong¹²^ORCID,Zhang Shiyong¹²,Cheng Zhe³⁴,Zhang Lian³⁴,Zheng Penghui¹²,Chen Feng-Xiang⁵,Wang Rong¹²^ORCID,Zhang Yun³⁴,Tan Wei¹²

Affiliation:

1. Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, Sichuan 610200, China

2. Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, Sichuan 621999, China

3. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

4. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

5. Department of Physics Science and Technology, School of Science, Wuhan University of Technology, Wuhan 430070, China

Funder

Science Challenge Project FundRef identification ID:

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0005091

Reference18 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. Self-Aligned AlGaN/GaN FinFETs

3. Impact of $\hbox{CF}_{4}$ Plasma Treatment on GaN

4. Plasma-induced damage to n-type GaN

5. Mapping etching induced damages on GaN surfaces using scanning internal photoemission microscopy

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