Self-Aligned AlGaN/GaN FinFETs-Reference-Cited by-同舟云学术

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Self-Aligned AlGaN/GaN FinFETs

Published:2017-10 Issue:10 Volume:38 Page:1445-1448
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Brown David F.^ORCID,Tang Yan,Regan Dean,Wong Joel^ORCID,Micovic Miroslav^ORCID

Funder

HRL Laboratories LLC

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8049543/08023835.pdf?arnumber=8023835

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A review on GaN HEMTs: nonlinear mechanisms and improvement methods;Journal of Semiconductors;2023-12-01

2. Influence of Fin Configurations on the GaN HEMTs under High-Voltage Bias;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

3. Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at V_d = 12 V;IEEE Electron Device Letters;2023-04

4. High-Efficiency Millimeter-Wave Enhancement-Mode Ultrathin-Barrier AlGaN/GaN Fin-HEMT for Low-Voltage Terminal Applications;IEEE Transactions on Electron Devices;2023

5. Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects;Journal of Applied Physics;2021-10-28

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