Influence of Fin Configurations on the GaN HEMTs under High-Voltage Bias
Author:
Affiliation:
1. School of Microelectronics
2. Xidian University,Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices,Xi'an,China,710071
Funder
National Natural Science Foundation of China
Fundamental Research Funds for the Central Universities
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10399638/10399484/10399684.pdf?arnumber=10399684
Reference5 articles.
1. Influence of Different Fin Configurations on Small-Signal Performance and Linearity for AlGaN/GaN Fin-HEMTs
2. Dynamic Over-Voltage Operation of a Discrete-Level Supply-Modulated GaN-based RF PA
3. Self-Aligned AlGaN/GaN FinFETs
4. Impact of Fin Width on Low-Frequency Noise in AlGaN/GaN FinFETs: Evidence for Bulk Conduction
5. Normally Off Single-Nanoribbon $\hbox{Al}_{2} \hbox{O}_{3}\hbox{/GaN}$ MISFET
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