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Normally Off Single-Nanoribbon $\hbox{Al}_{2} \hbox{O}_{3}\hbox{/GaN}$ MISFET

  • Published:2013-01 Issue:1 Volume:34 Page:27-29
  • ISSN:0741-3106
  • Container-title:IEEE Electron Device Letters
  • language:
  • Short-container-title:IEEE Electron Device Lett.

Author:

Im Ki-Sik,Kim Ryun-Hwi,Kim Ki-Won,Kim Dong-Seok,Lee Chun Sung,Cristoloveanu Sorin,Lee Jung-Hee

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 64 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical Performance Analysis of AlGaN/GaN Fin-HEMTs with Different Gate Structures by TCAD Simulation;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

2. Influence of Fin Configurations on the GaN HEMTs under High-Voltage Bias;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

3. Impact on DC and analog/RF performances of SOI based GaN FinFET considering high-k gate oxide;Memories - Materials, Devices, Circuits and Systems;2023-10

4. AlGaN/GaN superlattice-based multichannel RF transistors for high linearity and reliability: a simplified simulation approach;Semiconductor Science and Technology;2023-05-30

5. Impact of Fin Width on Low-Frequency Noise in AlGaN/GaN FinFETs: Evidence for Bulk Conduction;IEEE Access;2023
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