Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at V<sub> <i>d</i> </sub> = 12 V-Reference-Cited by-同舟云学术

Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at V_d = 12 V

Published:2023-04 Issue:4 Volume:44 Page:590-593
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Guo Jingshu¹^ORCID,Zhu Jiejie¹^ORCID,Liu Siyu¹^ORCID,Cheng Kai²,Zhu Qing¹^ORCID,Wang Pengfei¹^ORCID,Liu Kai¹,Zhao Ziyue¹^ORCID,Qin Lingjie¹,Zhou Yuxi¹,Mi Minhan¹^ORCID,Hao Yue¹^ORCID,Ma Xiaohua¹^ORCID

Affiliation:

1. School of Microelectronics and the State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, Xidian University, Xi’an, China

2. Enkris Semiconductor Inc., Suzhou, China

Funder

Fundamental Research Funds for the National Key Research and Development Project

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10081123/10050875.pdf?arnumber=10050875

Reference33 articles.

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2. High RF Performance Enhancement-Mode Al₂O₃/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique

3. Large signal linearity enhancement of AlGaN/GaN high electron mobility transistors by device-level Vt engineering for transconductance compensation;joglekar;IEDM Tech Dig,0

4. High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications

5. Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation

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