Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson’s Figures of Merit-Reference-Cited by-同舟云学术

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Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson’s Figures of Merit

Published:2024-05 Issue:5 Volume:71 Page:2943-2949
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Liu Xiaoyi¹,Chen Jingxiong¹^ORCID,Jiang Yuanxi²,Bian Kairan²,Wang Hong¹^ORCID

Affiliation:

1. School of Electronic and Information Engineering, South China University of Technology, Guangzhou, China

2. Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, Guangzhou, China

Funder

Science and Technology Plan Project of Guangdong Province

Science and Technology Development Special Fund Projects of Zhongshan City

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10508280/10492855.pdf?arnumber=10492855

Reference32 articles.

1. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices

2. Breakdown Enhancement and Current Collapse Suppression in AlGaN/GaN HEMT by NiOX/SiNX and Al2O3/SiNX as Gate Dielectric Layer and Passivation Layer

3. Electric Field Modulation in the Channel by Lateral Thickness Distribution of High-k Films Formed on GaN HEMTs to Improve Breakdown Voltage

4. Breakdown-Voltage-Enhancement Technique for RF-Based AlGaN/GaN HEMTs With a Source-Connected Air-Bridge Field Plate

5. AlInGaN/GaN HEMTs With High Johnson’s Figure-of-Merit on Low Resistivity Silicon Substrate

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