Mapping etching induced damages on GaN surfaces using scanning internal photoemission microscopy-Reference-Cited by-同舟云学术

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Mapping etching induced damages on GaN surfaces using scanning internal photoemission microscopy

Published:2017-11 Issue: Volume:70 Page:92-98
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Terano Akihisa,Imadate Hiroyoshi,Shiojima Kenji

Funder

Ministry of Education, Culture, Sports, Science, and Technology

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference32 articles.

1. Scanning internal-photoemission microscopy: new mapping technique to characterize electrical inhomogeneity of metal-semiconductor interface;Okumura;Jpn. J. Appl. Phys.,1989

2. Mapping evaluation of damage effect on electrical properties of GaAs Schottky contacts;Shiojima;J. Cryst. Growth,1990

3. Mapping of inhomogeneity and thermal degradation of Au/Ni/n-GaN Schottky diodes using scanning internal photoemission microscopy;Yamamoto;Phys. Status Solidi B,2015

4. Two-dimensional characterization of ion-implantation damage in GaN Schottky contacts using scanning internal photoemission microscopy;Shiojima;Jpn. J. Appl. Phys.,2016

5. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors;Ibbetson;Appl. Phys. Lett.,2000

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