Mapping evaluation of damage effect on electrical properties of GaAs Schottky contacts
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Microwave Field-Effect Transistors—Theory, Design and Applications;Pengelly,1986
2. Electrical characterization of Schottky contacts of Au, Al, Gd, and Pt onn‐type andp‐type GaAs
3. Deep‐level transient spectroscopy detection of defects created in epitaxial GaAs after electron‐beam metallization
4. Extended Abstracts 20th Intern. Conf. on Solid State Devices and Materials;Sekino,1988
5. The prospects for ultrahigh-speed VLSI GaAs digital logic
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