Mapping of inhomogeneity and thermal degradation of Au/Ni/n-GaN Schottky diodes using scanning internal photoemission microscopy-Reference-Cited by-同舟云学术

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Mapping of inhomogeneity and thermal degradation of Au/Ni/n-GaN Schottky diodes using scanning internal photoemission microscopy

Published:2015-01-29 Issue:5 Volume:252 Page:1017-1023
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Yamamoto Shingo¹,Kihara Yuhei¹,Shiojima Kenji¹

Affiliation:

1. Graduate School of Electrical and Electronics Engineering; University of Fukui; 3-9-1 Bunkyo Fukui 910-8507 Japan

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201451579/fullpdf

Reference24 articles.

1. High voltage (450 V) GaN Schottky rectifiers

2. A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

3. A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

4. Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

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1. Local bandgap narrowing in the forming state of threshold switching materials;Applied Physics Letters;2024-07-08

2. Mapping of ultra-high-pressure annealed n-GaN Schottky contacts using scanning internal photoemission microscopy;Materials Science in Semiconductor Processing;2023-08

3. Characterization of peripheries of n-GaN Schottky contacts using scanning internal photoemission microscopy;Japanese Journal of Applied Physics;2022-11-14

4. Estimation of uniformity in Schottky contacts between printed Ni electrode and n-GaN by scanning internal photoemission microscopy;Japanese Journal of Applied Physics;2022-07-27

5. Effects of surface treatment and annealing for Au/Ni/n-GaN Schottky barrier diodes;Japanese Journal of Applied Physics;2021-04-23

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