Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy-Reference-Cited by-同舟云学术

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Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy

Published:2014-12-30 Issue:6 Volume:2 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Walsh Lee A.,Hughes Greg,Weiland Conan,Woicik Joseph C.,Lee Rinus T. P.,Loh Wei-Yip,Lysaght Pat,Hobbs Chris

Funder

Science Foundation Ireland

U.S. Department of Energy

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.2.064010/fulltext

Reference41 articles.

1. Chemical analysis of HfO2∕Si (100) film systems exposed to NH3 thermal processing

2. Effects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides

3. Initiation of a passivated interface between hafnium oxide and In(Ga)As(0 0 1)−(4×2)

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