Chemical analysis of HfO2∕Si (100) film systems exposed to NH3 thermal processing-Reference-Cited by-同舟云学术

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Chemical analysis of HfO2∕Si (100) film systems exposed to NH3 thermal processing

Published:2007-01-15 Issue:2 Volume:101 Page:024105
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lysaght Patrick S.,Barnett Joel,Bersuker Gennadi I.,Woicik Joseph C.,Fischer Daniel A.,Foran Brendan,Tseng Hsing-Huang,Jammy Raj

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2422746

Reference49 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Application of HfSiON as a gate dielectric material

3. Boron penetration studies from p+ polycrystalline Si through HfSixOy

4. Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode

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