Boron penetration studies from p+ polycrystalline Si through HfSixOy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1498872
Reference18 articles.
1. A physical model for boron penetration through thin gate oxides from p/sup +/ polysilicon gates
2. High-κ gate dielectrics: Current status and materials properties considerations
3. Boron penetration in p+ polycrystalline-Si/Al2O3/Si metal–oxide–semiconductor system
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