Effects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides-Reference-Cited by-同舟云学术

Effects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides

Published:2009-12-21 Issue:25 Volume:95 Page:253501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhao Han,Huang Jeff,Chen Yen-Ting,Yum Jung Hwan,Wang Yanzhen,Zhou Fei,Xue Fei,Lee Jack C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3275001

Reference19 articles.

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2. Proceedings of the 66th IEEE Device Research Conference;Lin T.,2008

3. Proceedings of the 66th IEEE Device Research Conference;Ok I.,2008

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