Gate-controlled proximity magnetoresistance in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>In</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Ga</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mi>As</mml:mi><mml:mtext>/</mml:mtext><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mi>Ga</mml:mi><mml:mo>,</mml:mo><mml:mi>Fe</mml:mi></mml:mrow><mml:mo>)</mml:mo></mml:mrow><mml:mi>Sb</mml:mi></mml:mrow></mml:math> bilayer heterostructures-Reference-Cited by-同舟云学术

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Gate-controlled proximity magnetoresistance in In1−xGaxAs/(Ga,Fe)Sb bilayer heterostructures

Published:2022-06-21 Issue:23 Volume:105 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Takiguchi Kosuke,Okamura Kyosuke,Anh Le Duc^ORCID,Tanaka Masaaki^ORCID

Funder

Core Research for Evolutional Science and Technology

Precursory Research for Embryonic Science and Technology

Ministry of Education, Culture, Sports, Science and Technology

Grants-in-Aid for Scientific Research

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.105.235202/fulltext

Reference38 articles.

1. Proximitized materials

2. Effective gating and tunable magnetic proximity effects in two-dimensional heterostructures

3. Magnetic Proximity Effect as a Pathway to Spintronic Applications of Topological Insulators

4. Proximity-Induced Spin Polarization of Graphene in Contact with Half-Metallic Manganite

5. Magnetic-proximity-induced magnetoresistance on topological insulators

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