Engineering the Palladium–WSe2 Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts
Author:
Affiliation:
1. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, United States
2. CNR IMM, Institute for Microelectronics and Microsystems, Via Monteroni, I-73100 Lecce, Italy
Funder
National Institute of Standards and Technology
Science Foundation Ireland
H2020 Marie Sklodowska-Curie Actions
Semiconductor Research Corporation
Division of Electrical, Communications and Cyber Systems
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsanm.8b01708
Reference70 articles.
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