Annealed Ag contacts to MoS2 field-effect transistors-Reference-Cited by-同舟云学术

Annealed Ag contacts to MoS2 field-effect transistors

Published:2017-09-21 Issue:11 Volume:122 Page:115306
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Abraham Michael¹,Mohney Suzanne E.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

Funder

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4991961

Reference33 articles.

1. Single-layer MoS2 transistors

2. A subthermionic tunnel field-effect transistor with an atomically thin channel

3. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

4. High Performance Multilayer MoS2 Transistors with Scandium Contacts

5. How Good Can Monolayer MoS2 Transistors Be?

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