Super-Nernstian WSe<sub>2</sub>/MoS<sub>2</sub> Heterostructure ISFET Combining Negative Capacitance and Charge Screening Effects-Reference-Cited by-同舟云学术

Super-Nernstian WSe₂/MoS₂ Heterostructure ISFET Combining Negative Capacitance and Charge Screening Effects

Author:

Sanjay Sooraj¹^ORCID,Sakib Fahimul Islam²^ORCID,Hossain Mainul²^ORCID,Bhat Navakanta¹^ORCID

Affiliation:

1. Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru, India

2. Department of Electrical and Electronic Engineering, University of Dhaka, Dhaka, Bangladesh

Funder

Ministry of Education

Department of Science and Technology (DST) Nano Mission

Ministry of Electronics and Information technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

Reference68 articles.

3. A 201 mV/pH, 375 fps and 512×576CMOS ISFET sensor in 65 nm CMOS technology;jiang;Proc Custom Integr Circuits Conf,2015

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