Improved light extraction efficiency of GaN-based flip-chip light-emitting diodes with an antireflective interface layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4948749
Reference30 articles.
1. Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate
2. Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template
3. Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2Nanorod-Array Depth Patterned Sapphire Substrate
4. Improvement in light-output efficiency of near-ultraviolet InGaN–GaN LEDs fabricated on stripe patterned sapphire substrates
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1. Developments for enhancing the luminous intensity of LEDs by optimizing their structures;Journal of Physics: Conference Series;2022-04-01
2. Numerical Investigation of Light Extraction Efficiency of GaN-based Vertical Blue Micron-Scale Light-Emitting Diode Structures;Journal of Nanoscience and Nanotechnology;2021-03-01
3. Light Extraction Efficiency of GaN-Based Micro-Scale Light-Emitting Diodes Investigated Using Finite-Difference Time-Domain Simulation;IEEE Photonics Journal;2020-04
4. Performance enhancement of GaN-based near-ultraviolet flip-chip light-emitting diodes with two-step insulating layer scheme on patterned sapphire substrate;Journal of Materials Science: Materials in Electronics;2019-01-03
5. A study of GaN nucleation and coalescence in the initial growth stages on nanoscale patterned sapphire substrates via MOCVD;CrystEngComm;2018
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