Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate-Reference-Cited by-同舟云学术

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Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

Published:2009-07-06 Issue:1 Volume:95 Page:011110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chan Chia-Hua,Hou Chia-Hung,Tseng Shao-Ze,Chen Tsing-Jen,Chien Hung-Ta,Hsiao Fu-Li,Lee Chien-Chieh,Tsai Yen-Ling,Chen Chii-Chang

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3173817

Reference15 articles.

1. Characterization of MOCVD grown GaN on porous SiC templates

2. Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

3. Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template

4. Fabrication of Pyramidal Patterned Sapphire Substrates for High-Efficiency InGaN-Based Light Emitting Diodes

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1. Effect of grain coalescence on dislocation and stress in GaN films grown on nanoscale patterned sapphire substrates;CrystEngComm;2024

2. Realization of Low Dislocation Density AlN on Patterned Sapphire Substrate by Hydride Vapor‐Phase Epitaxy for Deep Ultraviolet Light‐Emitting Diodes;physica status solidi (a);2023-05-23

3. Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates;Journal of Electronic Materials;2023-03-29

4. Light Extraction Efficiency Enhancement in GaN ‐Based LEDs by Colloidal Self‐assembly;Functional Materials from Colloidal Self‐Assembly;2022-01-14

5. Van der Waals Self-Assembled Silica-Nanosphere/Graphene Buffer Layer for High-Quality Gallium Nitride Growth;Crystal Growth & Design;2021-09-02

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