Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2363148
Reference11 articles.
1. E. F. Schubert, Light Emitting Diodes, 1st ed. (Cambridge University Press, Cambridge, 2003), Chap. 12, pp. 245–259.
2. Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates
3. Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
4. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
5. Hydride vapor-phase epitaxy growth of high-quality GaN bulk single crystal by epitaxial lateral overgrowth
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