Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2Nanorod-Array Depth Patterned Sapphire Substrate-Reference-Cited by-同舟云学术

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Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2Nanorod-Array Depth Patterned Sapphire Substrate

Published:2012-04-01 Issue:4S Volume:51 Page:04DG11
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chiu Ching-Hsueh,Tu Po-Min,Chang Shih-Pang,Lin Chien-Chung,Jang Chung-Ying,Li Zhen-Yu,Yang Hung-Chih,Zan Hsiao-Wen,Kuo Hao-Chung,Lu Tien-Chang,Wang Shing-Chung,Chang Chun-Yen

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference27 articles.

1. Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip

2. Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3

3. Nucleation layer evolution in metal‐organic chemical vapor deposition grown GaN

4. Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar Substrates

5. Anisotropic epitaxial lateral growth in GaN selective area epitaxy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved light extraction efficiency of GaN-based flip-chip light-emitting diodes with an antireflective interface layer;AIP Advances;2016-05

2. Investigation on the Properties of Nonpolar m-Plane GaN-Based Light-Emitting Diode Wafers Grown on LiGaO2(100) Substrates;Journal of Electronic Materials;2015-03-06

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