Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar Substrates-Reference-Cited by-同舟云学术

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Highly Efficient and Bright LEDs Overgrown on GaN Nanopillar Substrates

Published:2011-07 Issue:4 Volume:17 Page:971-978
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Chiu Ching-Hsueh,Tu Po-Min,Lin Chien-Chung,Lin Da-Wei,Li Zhen-Yu,Chuang Kai-Lin,Chang Jet-Rung,Lu Tien-Chang,Zan Hsiao-Wen,Chen Chiang-Yao,Kuo Hao-Chung,Wang Shing-Chung,Chang Chun-Yen

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/2944/5975326/05604636.pdf?arnumber=5604636

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dislocation characterization in c-plane GaN epitaxial layers on 6 inch Si wafer with a fast second-harmonic generation intensity mapping technique;Nanotechnology;2023-02-03

2. Angular color variation in micron-scale light-emitting diode arrays;Optics Express;2019-07-30

3. Epitaxial lateral overgrowth of GaN on nano-cavity patterned sapphire substrates;Journal of Crystal Growth;2019-02

4. Linearly polarized photoluminescence of anisotropically strained c-plane GaN layers on stripe-shaped cavity-engineered sapphire substrate;Applied Physics Letters;2018-05-21

5. Carbon-nanotube-assisted nanoepitaxy of Si-doped GaN for improved performance of InGaN/GaN light-emitting diodes;Nanotechnology;2016-05-27

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