Carbon-nanotube-assisted nanoepitaxy of Si-doped GaN for improved performance of InGaN/GaN light-emitting diodes-Reference-Cited by-同舟云学术

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Carbon-nanotube-assisted nanoepitaxy of Si-doped GaN for improved performance of InGaN/GaN light-emitting diodes

Published:2016-05-27 Issue:27 Volume:27 Page:275602
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Park Ah Hyun,Chandramohan S,Seo Tae Hoon,Lee Gun Hee,Min Kyung Hyun,Hong Chang-Hee,Kim Myung Jong,Suh Eun-Kyung

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/27/i=27/a=275602/pdf

Reference50 articles.

1. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

2. History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination

3. On the origin of threading dislocations in GaN films

4. Strain-related phenomena in GaN thin films

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of High Al Content AlGaN Buffer Layer on the Properties of GaN‐on‐Silicon Materials;physica status solidi (a);2023-11-22

2. Impact of interfacial compositional diffusion on interfacial phonon scattering and transmission in GaN/AlN heterostructure;Journal of Applied Physics;2023-03-01

3. Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes;PLOS ONE;2022-11-17

4. Stress and dislocation control of GaN epitaxial films grown on Si substrates and their application in high-performance light-emitting diodes;Journal of Alloys and Compounds;2019-01

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