Linearly polarized photoluminescence of anisotropically strained c-plane GaN layers on stripe-shaped cavity-engineered sapphire substrate-Reference-Cited by-同舟云学术

Linearly polarized photoluminescence of anisotropically strained c-plane GaN layers on stripe-shaped cavity-engineered sapphire substrate

Published:2018-05-21 Issue:21 Volume:112 Page:212102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Jongmyeong¹^ORCID,Moon Daeyoung¹,Lee Seungmin¹^ORCID,Lee Donghyun¹^ORCID,Yang Duyoung¹^ORCID,Jang Jeonghwan¹,Park Yongjo¹²^ORCID,Yoon Euijoon¹²³^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Seoul National University, Seoul 08826, South Korea

2. Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Suwon 16229, South Korea

3. Research Institute of Advanced Materials & Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, South Korea

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5025221

Reference40 articles.

1. GaN, AlN, and InN: A review

2. Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire

3. Less strained and more efficient GaN light-emitting diodes with embedded silica hollow nanospheres

4. Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

5. Optical properties of wurtzite GaN epilayers grown onA-plane sapphire

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