Temperature‐Dependent Polarized Photoluminescence from c‐plane InGaN/GaN Multiple Quantum Wells Grown on Stripe‐Shaped Cavity‐Engineered Sapphire Substrate-Reference-Cited by-同舟云学术

Temperature‐Dependent Polarized Photoluminescence from c‐plane InGaN/GaN Multiple Quantum Wells Grown on Stripe‐Shaped Cavity‐Engineered Sapphire Substrate

Published:2020-04 Issue:4 Volume:257 Page:1900526
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Kim Jongmyeong¹,Park Seoung-Hwan²,Ahn Doyeol³,Yoon Euijoon¹⁴^ORCID

Affiliation:

1. Department of Materials Science and EngineeringSeoul National University Seoul 08826 Korea

2. Department of Electronics EngineeringCatholic University of Daegu Gyeongbuk 38430 Korea

3. Department of Electrical and Computer EngineeringUniversity of Seoul Seoul 02504 Korea

4. Research Institute of Advanced Materials & Inter-University Semiconductor Research CenterSeoul National University Seoul 08826 Korea

Funder

Ministry of Education, Science and Technology

Samsung

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900526

Reference34 articles.

1. Prospects for LED lighting

2. Solid-State Light Sources Getting Smart

3. Optical polarization characteristics ofm-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure

4. Multilayer Polarizers: A Review of the Claims

5. Continuous-Wave Operation ofm-Plane InGaN Multiple Quantum Well Laser Diodes

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