Improvement in light-output efficiency of near-ultraviolet InGaN–GaN LEDs fabricated on stripe patterned sapphire substrates-Reference-Cited by-同舟云学术

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Improvement in light-output efficiency of near-ultraviolet InGaN–GaN LEDs fabricated on stripe patterned sapphire substrates

Published:2005-09 Issue:3 Volume:122 Page:184-187
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Lee Y.J.,Hsu T.C.,Kuo H.C.,Wang S.C.,Yang Y.L.,Yen S.N.,Chu Y.T.,Shen Y.J.,Hsieh M.H.,Jou M.J.,Lee B.J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. The Blue Laser Diode;Nakamura,1997

2. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

3. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

4. Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes

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1. Effective Chemical Lift-Off for Air-Tunnel GaN on a Trapezoid-Patterned Sapphire Substrate;Micromachines;2023-03-29

2. Application of patterned sapphire substrate for III-nitride light-emitting diodes;Nanoscale;2022

3. Extraction efficiency simulation in deep ultraviolet AlGaN light emitting diodes;Optical and Quantum Electronics;2021-07

4. Enhancing the light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes with photonic crystal structures;Optics Express;2020-07-17

5. 395 nm GaN-based near-ultraviolet light-emitting diodes on Si substrates with a high wall-plug efficiency of 520%@350 mA;Optics Express;2019-02-27

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