395 nm GaN-based near-ultraviolet light-emitting diodes on Si substrates with a high wall-plug efficiency of 520%@350 mA-Reference-Cited by-同舟云学术

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395 nm GaN-based near-ultraviolet light-emitting diodes on Si substrates with a high wall-plug efficiency of 520%@350 mA

Published:2019-02-27 Issue:5 Volume:27 Page:7447
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Li Yuan,Lan Jianyu,Wang Wenliang,Zheng Yulin,Xie Wentong,Tang Xin,Kong Deqi,Xia Yu,Lan Zhibin,Li Runze,He Xiaobin,Li Guoqiang

Funder

China Postdoctoral Science Foundation

National Defense Scientific and Technological Innovation Special Zone

National Natural Science Foundation Major Instrument Special Project of China

National Natural Science Foundation of China

National Science Fund for Excellent Young Scholars of China

Natural Science Foundation for Doctor Scientific Research Start of Guangdong Province

Source fund of the State Key Laboratory of Space Technology of China

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference36 articles.

1. High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer

2. Light-extraction enhancement of GaN-based 395 nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode

3. Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs

4. Fabrication and characterization of 395 nm ultraviolet GaN light-emitting diodes

5. High-performance near-UV LED grown by carbon nanotube assisted nanoheteroepitaxy

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1. Fabricating Ultralow Dislocation Density Microlight-Emitting Diodes on a Silicon Substrate via an Epitaxial Lateral Overgrowth Method;Crystal Growth & Design;2023-06-12

2. Phosphor conversion for WLEDs: YBO₃: Ce³⁺, Tb³⁺ and its effects on the luminous intensity and chromatic properties of dual-layer WLED model;Materials Science-Poland;2022-12-01

3. Ultralow-Supersaturation Al Pretreatment toward Low Dislocation Density and Low Radio Frequency Loss GaN/AlN Epi-Stacks on High-Resistivity Si Substrates;ACS Applied Electronic Materials;2022-07-29

4. Enhanced optical output of GaN-based near-ultraviolet light-emitting diodes using an ultra-thin air cavity nanopatterned sapphire substrate;CrystEngComm;2022

5. Selecting nitride host for Yb3+ toward near-infrared emission with low-energy charge transfer band;Journal of Rare Earths;2021-12

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