Fabricating Ultralow Dislocation Density Microlight-Emitting Diodes on a Silicon Substrate via an Epitaxial Lateral Overgrowth Method-Reference-Cited by-同舟云学术

Fabricating Ultralow Dislocation Density Microlight-Emitting Diodes on a Silicon Substrate via an Epitaxial Lateral Overgrowth Method

Published:2023-06-12 Issue:7 Volume:23 Page:4855-4861
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Kamikawa Takeshi¹^ORCID,Kobayashi Toshihiro¹,Aoki Yuuta¹,Suda Noboru¹,Ogura Hiroyuki¹,Seida Mitsunari¹,Takeuchi Kazuma¹,Mishima Kosuke¹,Taniguchi Yuki¹,Yamashita Fumio¹,Hayashi Yuuichiro¹,Masaki Katsuaki¹

Affiliation:

1. Research Institute for Advanced Material and Devices, Corporate R&D Group, Kyocera Corporation, 3-5-3 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-0237, Japan

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c00069

Reference23 articles.

1. LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

2. Toward Smart and Ultra-efficient Solid-State Lighting

3. Recent Progress in AlGaN-Based Deep-UV LEDs

4. 395 nm GaN-based near-ultraviolet light-emitting diodes on Si substrates with a high wall-plug efficiency of 520%@350 mA

5. Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

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