Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon-Reference-Cited by-同舟云学术

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

Published:2003-08-05 Issue:6 Volume: Page:1583-1606
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Dadgar A.¹,Strittmatter A.²,Bläsing J.¹,Poschenrieder M.¹,Contreras O.³,Veit P.¹,Riemann T.¹,Bertram F.¹,Reiher A.¹,Krtschil A.¹,Diez A.¹,Hempel T.¹,Finger T.¹,Kasic A.³,Schubert M.³,Bimberg D.²,Ponce F. A.³,Christen J.¹,Krost A.¹

Affiliation:

1. Otto‐von Guericke Universität Magdeburg, Institut für Experimentelle Physik, Fakultät für Naturwissenschaften, Postfach 4120, 39016 Magdeburg, Germany

2. TU‐Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany

3. Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287, USA

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303122

Reference120 articles.

1. The Use of Metalorganics in the Preparation of Semiconductor Materials

2. Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate

3. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

4. Hole Compensation Mechanism of P-Type GaN Films

5. Ultraviolet and violet GaN light emitting diodes on silicon

Cited by 125 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 480 nm InGaN-based cyan laser diode grown on Si by interface engineering of active region;Optics Express;2024-05-09

2. Composition dependence of intrinsic surface states and Fermi-level pinning at ternary AlxGa1−xN m-plane surfaces;Journal of Vacuum Science & Technology A;2024-01-29

3. Transfer-free chemical vapor deposition graphene for nitride epitaxy: challenges, current status and future outlook;Science China Chemistry;2023-09-01

4. Local optical analysis of InGaN/GaN nanorod LED structures grown on Si(111);Journal of Applied Physics;2023-07-26

5. Influence of Si(111) substrate off-cut on AlN film crystallinity grown by magnetron sputter epitaxy;Journal of Applied Physics;2023-07-12