Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs-Reference-Cited by-同舟云学术

Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs

Published:2017-08-07 Issue:6 Volume:111 Page:062103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee In-Hwan¹,Polyakov A. Y.²,Hwang Sung-Min³,Shmidt N. M.⁴^ORCID,Shabunina E. I.⁴,Tal'nishnih N. A.⁵,Smirnov N. B.²,Shchemerov I. V.²,Zinovyev R. A.²^ORCID,Tarelkin S. A.²⁶^ORCID,Pearton S. J.⁷^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Korea University, Anamro 145, Seoul 02841, South Korea

2. National University of Science and Technology MISiS, Leninsky Ave., Moscow 194017, Russia

3. Soft-Epi, Inc., Opo-ro 240, Gwangju-si, Gyeonggi-do 464-892, South Korea

4. Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya Str., St. Petersburg 194021, Russia

5. Submicron Heterostructures for Microelectronics Research and Engineering Center, St. Petersburg 194021, Russia

6. Technological Institute for Superhard and Novel Carbon Materials, 7 Centralnaya St., Troitsk, Moscow 142190, Russia

7. University of Florida, Gainesville, Florida 32611, USA

Funder

Defense Threat Reduction Agency (DTRA)

National Research Foundation of Korea (NRF)

Ministry of Education and Science of the Russian Federation (Minobrnauka)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4985190

Reference33 articles.

1. Advances and prospects in nitrides based light-emitting-diodes

2. The efficiency challenge of nitride light-emitting diodes for lighting

3. Efficiency droop in light-emitting diodes: Challenges and countermeasures

4. Optimal ways of colour mixing for high-quality white-light LED sources

5. Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp

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