Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2969062
Reference16 articles.
1. AlGaN/GaN quantum well ultraviolet light emitting diodes
2. Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip
3. Defect structure in selectively grown GaN films with low threading dislocation density
4. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
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