Preparation of Dome-Shaped SiO2/Al2O3 Composite-Patterned Sapphire Substrate for High-Performance Mini-LED Backlight Modules-Reference-Cited by-同舟云学术

Preparation of Dome-Shaped SiO₂/Al₂O₃ Composite-Patterned Sapphire Substrate for High-Performance Mini-LED Backlight Modules

Published:2023-09 Issue:9 Volume:70 Page:4760-4765
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Xu Liang¹^ORCID,Meng Jiahao¹^ORCID,Yang Zhihui²^ORCID,Li Jiasheng¹^ORCID,Ding Xinrui¹^ORCID,Li Zong-Tao¹^ORCID

Affiliation:

1. National and Local Joint Engineering Research Center of Semiconductor Display and Optical Communication Devices, South China University of Technology, Guangzhou, China

2. School of Optics and Photonics, Beijing Institute of Technology, Beijing, China

Funder

Guangdong Provincial Key Research and Development Program

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10227840/10195251.pdf?arnumber=10195251

Reference42 articles.

1. Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template

2. The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency

3. GaN-Based Light-Emitting Diodes With Air Gap Array and Patterned Sapphire Substrate

4. Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures

5. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

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