The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. S. Nakamura, G. Fasol, The Blue Laser Diode, Springer, Berlin 1997.
2. Suppression of Nonradiative Recombination by V-Shaped Pits inGaInN/GaNQuantum Wells Produces a Large Increase in the Light Emission Efficiency
3. Formation of V-shaped pits in InGaN/GaN multiquantum wells and bulk InGaN films
4. Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure
5. Investigations on Structural Properties of GaInN-GaN Multi Quantum Well Structures
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