Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure-Reference-Cited by-同舟云学术

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Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure

Published:2001-11-01 Issue:Part 2, No. 11A Volume:40 Page:L1170-L1172
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ishikawa Hiroyasu,Nakada Naoyuki,Mori Masayoshi,Zhao Guan-Yuan,Egawa Takashi,Jimbo Takashi,Umeno Masayoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN‐Based Materials;Nitride Semiconductor Technology;2020-08-03

2. Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes;Scientific Reports;2017-03-21

3. Optical and crystal quality improvement in green emitting InxGa1-xN multi-quantum wells through optimization of MOCVD growth;SPIE Proceedings;2016-02-26

4. Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers;Journal of Alloys and Compounds;2015-06

5. Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness;Journal of Applied Physics;2015-02-07

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