GaN-Based Light-Emitting Diodes With Air Gap Array and Patterned Sapphire Substrate-Reference-Cited by-同舟云学术

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GaN-Based Light-Emitting Diodes With Air Gap Array and Patterned Sapphire Substrate

Published:2011-09 Issue:17 Volume:23 Page:1207-1209
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Lai Wei-Chih,Yang Ya-Yu,Chen Ying-Hong,Sheu Jinn-Kong

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/68/5970137/05783297.pdf?arnumber=5783297

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation of Dome-Shaped SiO₂/Al₂O₃ Composite-Patterned Sapphire Substrate for High-Performance Mini-LED Backlight Modules;IEEE Transactions on Electron Devices;2023-09

2. Improved Light Output Power of InGaN/GaN LED by Using Ultrasonic Spray Pyrolysis Deposited MgO;IEEE Transactions on Electron Devices;2017-08

3. Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs;Nanoscale Research Letters;2014-11-03

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