Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3275241
Reference11 articles.
1. Power electronics on InAlN/(In)GaN: Prospect for a record performance
2. Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)
3. High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures
4. Formation mechanism of Ohmic contacts on AlGaN∕GaN heterostructure: Electrical and microstructural characterizations
5. Dislocation-induced nonuniform interfacial reactions of Ti∕Al∕Mo∕Au ohmic contacts on AlGaN∕GaN heterostructure
Cited by 30 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. TMAH Pretreatment to Minimize Ohmic Contact Resistance in InAlN/GaN-on-Si RF HEMTs;IEEE Transactions on Electron Devices;2023-11
2. Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance;Applied Physics Letters;2022-11-21
3. Low-Resistive Ohmic Contacts in High-Electron-Mobility AlN/GaN Heterostructures by Suppressing the Oxygen Incorporation;ACS Applied Electronic Materials;2022-07-12
4. GaN High-Electron-Mobility-Transistor on Free- Standing GaN Substrate With Low Contact Resistance and State-of-the-Art fT × LG Value;IEEE Transactions on Electron Devices;2022-03
5. Scandium-Based Ohmic Contacts to InAlN/GaN Heterostructures on Silicon;IEEE Electron Device Letters;2021-04
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3