Micro-structural analysis of local damage introduced in subsurface regions of 4H-SiC wafers during chemo-mechanical polishing-Reference-Cited by-同舟云学术

Micro-structural analysis of local damage introduced in subsurface regions of 4H-SiC wafers during chemo-mechanical polishing

Published:2016-04-07 Issue:13 Volume:119 Page:135702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sako Hideki,Matsuhata Hirofumi,Sasaki Masayuki,Nagaya Masatake,Kido Takanori,Kawata Kenji,Kato Tomohisa,Senzaki Junji,Kitabatake Makoto,Okumura Hajime

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4945017

Reference31 articles.

1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy

2. Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates

3. Progress in epitaxial growth of SiC

4. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices

5. Designing and Fabrication of the VLD Edge Termination for 3.3 kV SiC SBD

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