Designing and Fabrication of the VLD Edge Termination for 3.3 kV SiC SBD-Reference-Cited by-同舟云学术

Designing and Fabrication of the VLD Edge Termination for 3.3 kV SiC SBD

Published:2014-02 Issue: Volume:778-780 Page:791-794
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Ebihara Kohei¹,Yamamoto Yasuki¹,Nakaki Yoshiyuki¹,Aya Sunao¹,Nakata Shuhei¹,Imaizumi Masayuki¹,Toyoda Yoshihiko¹,Yamakawa Satoshi¹

Affiliation:

1. Mitsubishi Electric Corporation

Abstract

Edge termination guaranteeing high breakdown voltage and robustness in its fabrication are required in SiC power devices. We newly employed the VLD edge termination for 3.3 kV-rated SiC SBDs, which was formed by Al ion implantation using a resist mask having a varying thickness. The breakdown voltage is recorded to be over 96% of the parallel-plane breakdown voltage, and the reverse bias characteristics are well accorded with the result of TCAD simulation.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.778-780.791.pdf

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