A trench beside field limiting rings terminal for improved 4H-SiC junction barrier Schottky diodes: Proposal and investigation
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Reference19 articles.
1. Reverse-Bias stress-induced electrical parameters instability in 4H-SiC JBS diodes terminated nonequidistance FLRs;Song;IEEE Trans. Electron Devices,2019
2. A near ideal edge termination technique for ultrahigh-voltage 4H-SiC devices with multi-zone gradient field limiting ring;Deng,2018
3. High-performance temperature sensors based on dual 4H-SiC JBS and SBD devices;Min;Materials,2020
4. Comparison in radiation tolerance between FLR planar junction termination and positive bevel edge termination for power diodes;Liao;Microelectron. J.,2022
5. Sensitivity and mechanism study of single-event burnout in 4H-SiC devices with FLRs Termination;Liu;IEEE Trans. Electron Devices,2023
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