Investigations on the Recovery of the Electrical Properties of Smart Cut™-Transferred SiC Thin Film Using SiC-on-Insulator Structures

Author:

Gelineau Guillaume1,Masante Cédric1,Rolland Emmanuel1,Barbet Sophie1,Corbin Lucie1,Papon Anne-Marie1,Caridroit Simon1,Delcroix Mathieu1,Huet Stéphanie1,Moulin Alexandre1,Prudkovskiy Vladimir S.1ORCID,Troutot Nicolas1,Rouchier Séverin2,Turchetti Loic2,Mony Karine3,Widiez Julie1

Affiliation:

1. CEA-Leti

2. SOITEC

3. Univ. Grenoble Alpes

Abstract

SiC-on-Insulator (SiCOI) structures fabricated using the Smart Cut™ technique can be of great interest in order to probe the properties of a silicon carbide (SiC) transferred layer, by electrically insulating it from the receiver substrate. In this study, we report the fabrication of such a SiCOI structure using a SiC receiver, as well as its electrical and TEM characterization after high temperature annealing. We highlight a decrease of the transferred layer electrical resistivity with increasing annealing temperature, due to doping reactivation and electron mobility enhancement. After low temperature annealing (1200°C to 1400°C), deep acceptor levels, possibly located in a damaged region near the substrate’s surface, might be responsible of a non negligible electrical compensation. Beyond 1400°C however, the transferred SiC crystal is healed and electron transport is only subjected to shallow nitrogen ionization.

Publisher

Trans Tech Publications, Ltd.

Reference37 articles.

1. S. Rouchier et al., Materials Sience Forum, vol. 1062, p.131–135, 2021.

2. K. Imakoa et al., UN patent 9 761 749 B2, 2017.

3. A. Yi et al., Optical Materials, vol. 107, p.109990, 2020.

4. F. Mu and T. Suga, presented at ICEP 2019, Japan, 2019, p.198–199.

5. F. Mu et al., Journal of Solid State Sciuence and Technology, vol. 5, no. 9, p.451–456, 2016.

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3