On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition-Reference-Cited by-同舟云学术

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On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition

Published:2016-08-28 Issue:8 Volume:120 Page:085314
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Macco Bart¹,Verheijen Marcel A.¹,Black Lachlan E.¹,Barcones Beatriz²,Melskens J.¹,Kessels Wilhelmus M. M.¹³

Affiliation:

1. Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands

2. NanoLab@TU/e, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands

3. Solliance Solar Research, High Tech Campus 5, 5656 AE Eindhoven, The Netherlands

Funder

Stichting voor de Technische Wetenschappen (STW)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4962008

Reference25 articles.

1. High-efficiency Silicon Heterojunction Solar Cells: A Review

2. Low-Temperature High-Mobility Amorphous IZO for Silicon Heterojunction Solar Cells

3. Tungsten doped indium oxide film: Ready for bifacial copper metallization of silicon heterojunction solar cell

4. High-mobility, sputtered films of indium oxide doped with molybdenum

5. Hydrogen-doped In2O3 transparent conducting oxide films prepared by solid-phase crystallization method

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4. Nucleation and grain growth in low-temperature rapid solid-phase crystallization of hydrogen-doped indium oxide;Japanese Journal of Applied Physics;2024-02-19

5. c-Axis Aligned 3 nm Thick In₂O₃ Crystal Using New Liquid DBADMIn Precursor for Highly Scaled FET Beyond the Mobility–Stability Trade-off;Nano Letters;2024-01-17

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