Crystallization Disruption via Atomic Layer Deposition Substitutional Dopant Scheduling: High-Mobility Amorphous Indium Zinc Tin Oxide-Reference-Cited by-同舟云学术

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Crystallization Disruption via Atomic Layer Deposition Substitutional Dopant Scheduling: High-Mobility Amorphous Indium Zinc Tin Oxide

Published:2024-05-03 Issue:5 Volume:2 Page:877-884
ISSN:2771-9855
Container-title:ACS Applied Optical Materials
language:en
Short-container-title:ACS Appl. Opt. Mater.

Author:

Muir Mark¹,Kupferberg Jacob E.¹,Jones Jessica C.¹^ORCID,Rozyyev Vepa²³,Tiede David M.⁴^ORCID,Elam Jeffrey W.²^ORCID,Martinson Alex B. F.¹^ORCID

Affiliation:

1. Material Science Division, Argonne National Laboratory, 9700 S. Cass Ave., Lemont, Illinois 60439, United States

2. Applied Materials Division, Argonne National Laboratory, 9700 S. Cass Ave., Lemont, Illinois 60439, United States

3. Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States

4. Chemical Sciences and Engineering Division, Argonne National Laboratory, 9700 S. Cass Ave., Lemont, Illinois 60439, United States

Funder

Basic Energy Sciences

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaom.4c00135

Reference36 articles.

1. Atomic layer deposition of conductive and semiconductive oxides

2. Transparent Conductive Oxides and Their Applications in Near Infrared Plasmonics

3. Orientational analysis of atomic pair correlations in nanocrystalline indium oxide thin films

4. Microfluidic electrochemical cell for in situ structural characterization of amorphous thin-film catalysts using high-energy X-ray scattering

5. Transparent Electrodes for Efficient Optoelectronics

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