c-Axis Aligned 3 nm Thick In2O3 Crystal Using New Liquid DBADMIn Precursor for Highly Scaled FET Beyond the Mobility–Stability Trade-off-Reference-Cited by-同舟云学术

c-Axis Aligned 3 nm Thick In₂O₃ Crystal Using New Liquid DBADMIn Precursor for Highly Scaled FET Beyond the Mobility–Stability Trade-off

Author:

Choi Su-Hwan¹^ORCID,Ryu Seong-Hwan²,Kim Dong-Gyu²,Kwag Jae-Hyeok¹,Yeon Changbong³,Jung Jaesun³,Park Young-Soo³,Park Jin-Seong¹²^ORCID

Affiliation:

1. Division of Nanoscale Semiconductor Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea

2. Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea

3. Thin Film Materials Development Team, Soulbrain, 14-102 Gongdan-Gil, Gongju Republic of Korea

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Soulbrain

Publisher

American Chemical Society (ACS)

Link

Reference43 articles.

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