Affiliation:
1. Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Breguet 2, CH-2000 Neuchâtel, Switzerland
Abstract
Abstract
Silicon heterojunction solar cells consist
of thin amorphous silicon layers deposited on
crystalline silicon wafers. This design
enables energy conversion efficiencies above
20% at the industrial production level. The
key feature of this technology is that the
metal contacts, which are highly recombination
active in traditional, diffused-junction
cells, are electronically separated from the
absorber by insertion of a wider bandgap
layer. This enables the record open-circuit
voltages typically associated with
heterojunction devices without the need for
expensive patterning techniques. This article
reviews the salient points of this
technology. First, we briefly elucidate device
characteristics. This is followed by a
discussion of each processing step, device
operation, and device stability and industrial
upscaling, including the fabrication of solar
cells with energy-conversion efficiencies over
21%. Finally, future trends are pointed
out.
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