Enhancing Electrical and Physical Contacts of Copper‐Electroplated Silicon Heterojunction Solar Cells through Chemical Pretreated Seed Layers

Abstract

Copper electroplating offering the potential to replace low‐temperature sintered silver pastes holds significant promise as a metallization process for silicon heterojunction (SHJ) solar cells (SCs). To unlock the full potential of copper electroplating, it is crucial to enhance the contact properties between the electroplated grids and the indium tin oxide (ITO) films, addressing both contact resistivity and physical adhesion. Herein, a zinc‐assisted Fe2+ system to modify the ITO film is used, leading to the formation of an In/Sn/SnO mixed‐metal transition layer. This transition layer serves as a seed layer for metal electroplating, reducing contact resistivity and enhancing the mechanical connection between the electroplated metals and the ITO films. Following the ITO pretreatment process, the contact resistivity is significantly reduced from 1.4 to 0.2 mΩ cm2, and the peel force value of the pretreated sample reaches 14.2 N mm−1, which is 75.3% higher than that of the untreated sample. The proof‐of‐concept SHJ SC with copper electroplating after ITO pretreatment achieves a remarkable power conversion efficiency of 22.6%. These results clearly demonstrate that ITO pretreatment using the zinc‐assisted Fe2+ system is an effective approach for enhancing contact properties and improving the performance of copper‐electroplated SHJ SCs, showcasing significant potential for industry applications.