Formation of self-assembled InAs quantum dots on (110) GaAs substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1633683
Reference26 articles.
1. Nucleation and strain relaxation at the InAs/GaAs(100) heterojunction
2. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
3. In situ, atomic force microscope studies of the evolution of InAs three‐dimensional islands on GaAs(001)
4. Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAs
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2. Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots;Semiconductor Science and Technology;2019-09-16
3. Quantum dot growth on (111) and (110) surfaces using tensile-strained self-assembly;Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV;2018-02-21
4. Thermoelectric Converter Based on Metal–Dielectric–Semiconductor–Metal Structures and Its Experimental Investigation;Springer Proceedings in Physics;2018
5. Quantum Dot Self-Assembly Driven by a Surfactant-Induced Morphological Instability;Physical Review Letters;2017-08-24
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