Bismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots
Author:
Funder
Alexander von Humboldt-Stiftung
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/ab3c23/pdf
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1. Triggered Single Photons from a Quantum Dot
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4. An entangled-light-emitting diode
5. A comparison of strain relief behaviour of In x Ga1? x As alloy on GaAs (001) and (110) substrates
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1. Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)A;Semiconductor Science and Technology;2023-08-10
2. Exploring the formation of InAs(Bi)/GaAs QDs at two growth-temperature regimes under different Bi supply conditions;Applied Surface Science;2023-01
3. Growth of InAs(Bi)/GaAs Quantum Dots under a Bismuth Surfactant at High and Low Temperature;Journal of Nanomaterials;2022-06-06
4. Effect of bismuth surfactant on the structural, morphological and optical properties of self-assembled InGaAs quantum dots grown by Molecular Beam Epitaxy on GaAs (001) substrates;Journal of Alloys and Compounds;2022-06
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