Quantum Dot Self-Assembly Driven by a Surfactant-Induced Morphological Instability-Reference-Cited by-同舟云学术

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Quantum Dot Self-Assembly Driven by a Surfactant-Induced Morphological Instability

Published:2017-08-24 Issue:8 Volume:119 Page:
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Lewis Ryan B.,Corfdir Pierre,Li Hong,Herranz Jesús,Pfüller Carsten,Brandt Oliver,Geelhaar Lutz

Funder

Alexander von Humboldt-Stiftung

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.119.086101/fulltext

Reference42 articles.

1. In-situ growth of quantum dot structures by the Stranski-Krastanow growth mode

2. Structural properties of self-organized semiconductor nanostructures

3. Kinetically controlled critical thickness for coherent islanding and thick highly strained pseudomorphic films ofInxGa1−xAs on GaAs(100)

4. Surfactants in epitaxial growth

5. Influence of surfactants in Ge and Si epitaxy on Si(001)

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3. Growth of α-Ga₂O₃ on α-Al₂O₃ by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy;Japanese Journal of Applied Physics;2023-03-23

4. Exploring the formation of InAs(Bi)/GaAs QDs at two growth-temperature regimes under different Bi supply conditions;Applied Surface Science;2023-01

5. Surfactant effect of Bi on InAs quantum dot laser diode;Japanese Journal of Applied Physics;2022-11-17

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